DE
Aktueller Standort
×
DE

Wählen Sie Region, um Ihr Erlebnis anzupassen:

Menü umschalten
DE
Aktueller Standort
×
DE

Wählen Sie Region, um Ihr Erlebnis anzupassen:

Kontaktaufnahme

Live-Chat mit Tektronix-Vertretern. Verfügbar von 09:00 - 17:00 Uhr CET.

Anrufen

Kontaktieren Sie uns telefonisch unter 1-800-833-9200

Verfügbar von 9:00 bis 17:00 Uhr CET Geschäftstage

Download

Laden Sie Handbücher, Datenblätter, Software und vieles mehr herunter:

DOWNLOADTYP
MODELL ODER SCHLÜSSELWORT

Qualifying High-K Gate Materials with Charge-Trapping Measurements


As the size of transistors continues to scale down, the use of conventional SiO2 as a gate dielectric material is approaching physical and electrical limits. The principal limitation is high leakage current due to quantum mechanical tunneling of carriers through the thin gate oxide. To reduce gate leakage current, high dielectric constant (high κ) gate materials, such as HfO2, ZrO2 and Al2O3 and their silicates, have drawn a great deal of attention in recent years. Due to their high dielectric constants, high k gates can be made much thicker than SiO2 while achieving the same gate capacitance. The result is lower leakage current—sometimes, several orders of magnitude lower.

This article by Keithley Application Engineers examines reasons and methods to qualify high k materials.